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Advanced Technical Information
CoolMOS ? 1) Power MOSFET
Electrically isolated back surface
2500 V electrical isolation
N-Channel Enhancement Mode
IXKC 15N60C5
I D25 = 15 A
V DSS = 600 V
R DS(on) max = 0.165 Ω
Low R DSon , high V DSS MOSFET
Ultra low gate charge
G
D
ISOPLUS220 TM
G
D
S
isolated back
MOSFET
S
E72873
Features
surface
Symbol
V DSS
Conditions
T VJ = 25°C
Maximum Ratings
600 V
? Silicon chip on Direct-Copper-Bond
substrate
- high power dissipation
V GS
± 20
V
- isolated mounting surface
I D25
I D90
T C = 25°C
T C = 90°C
15
11
A
A
- 2500 V electrical isolation
- low drain to tab capacitance (< 30 pF)
? Fast CoolMOS ? 1) power MOSFET 4 th
E AS
E AR
single pulse
repetitive
I D = 7.9 A; T C = 25°C
522
0.79
mJ
mJ
generation
- high blocking capability
dV/dt
MOSFET dV/dt ruggedness V DS = 0...480 V
50
V/ns
- lowest resistance
- avalanche rated for unclamped
inductive switching (UIS)
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise speci?ed)
min.
typ.
max.
- low thermal resistance
due to reduced chip thickness
? Enhanced total power density
R DSon
V GS = 10 V; I D = 12 A
150
165
m Ω
Applications
V GS(th)
I DSS
I GSS
C iss
V DS = V GS ; I D = 0.79 mA
V DS = 600 V; V GS = 0 V
V GS = ± 20 V; V DS = 0 V
V GS = 0 V; V DS = 100 V
T VJ = 25°C
T VJ = 125°C
2.5
3
10
2000
3.5
1
100
V
μA
μA
nA
pF
? Switched mode power supplies
(SMPS)
? Uninterruptible power supplies (UPS)
? Power factor correction (PFC)
? Welding
? Inductive heating
? PDP and LCD adapter
C oss
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
R thJC
f = 1 MHz
V GS = 0 to 10 V; V DS = 400 V; I D = 12 A
V GS = 10 V; V DS = 400 V
I D = 12 A; R G = 3.3 Ω
100
40
9
13
12
5
50
5
52
1.1
pF
nC
nC
nC
ns
ns
ns
ns
K/W
Advantages
? Easy assembly:
no screws or isolation foils required
? Space savings
? High power density
? High reliability
1)
CoolMOS ? is a trademark of
In?neon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
? 2009 IXYS All rights reserved
20090209b
1-4
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相关代理商/技术参数
IXKC19N60C5 功能描述:MOSFET 19 Amps 600V 0.125 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXKC20N60C 功能描述:MOSFET 14 Amps 600V 0.19 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXKC23N60C5 功能描述:MOSFET 23 Amps 600V 0.1 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXKC25N80C 功能描述:MOSFET 25 Amps 800V 0.15 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXKC40N60C 功能描述:MOSFET 28 Amps 600V 0.1 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXKF40N60SCD1 功能描述:MOSFET 40 Amps 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXKG25N80C 功能描述:MOSFET 25 Amps 800V 0.15 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXKH20N60C5 功能描述:MOSFET 20 Amps 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube